Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric HfO2

• Published in: IEEE electron device letters Vol. 33; no. 2; pp. 185 - 187
• Main Authors: MÜLLER, Johannes, BÖSCKE, Tim S, SCHRÖDER, Uwe, HOFFMANN, Raik, MIKOLAJICK, Thomas, FREY, Lothar
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.02.2012
• Subjects: Applied sciences; Compound structure devices; Design. Technologies. Operation analysis. Testing; Dielectric, amorphous and glass solid devices; Electronics; Exact sciences and technology; Integrated circuits; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Polycrystal; Transistor gate; Hafnium oxide; Polarization modulation; IV-VI compound; Implementation; Degradation; Time dependence; Non volatile memory; Complementary MOS technology; Ferroelectric switching; Silicon; Ferroelectric capacitors; ns range; Damaging; Pulse width; Dielectric materials; Multiple layer; Erasure; Field effect transistor; metal-ferroelectric-insulator-semiconductor (MFIS) FET; Ferroelectric materials; MFIS structure; Silicon oxides; Integrated circuit; Recording; nonvolatile memory
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2177435