A quantitative theory of 1/f-type noise due to interface states in thermally oxidized silicon

Saved in:
Bibliographic Details
Published inIEEE transactions on electron devices Vol. 15; no. 6; p. 427
Main Authors Nicollian, E.H., Melchior, H.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.1968
Subjects
Electron tubes
Germanium
Radiative recombination
Silicon
Surface treatment
Time-frequency analysis
Online AccessGet full text

Cover

More Information
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1968.16302