Opto-microwave experimental mapping of SiGe/Si phototransistors at 850 nm

This paper presents measurement results providing the mapping of the opto-microwave transfer function performed on an SiGe microwave heterojunction phototransistor (HPT). This measurements will be used to extract a guideline for designing phototransistors. A mapping of the HPT's gain in low fre...

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Bibliographic Details
Published inInternational journal of microwave and wireless technologies Vol. 1; no. 6; pp. 469 - 473
Main Authors Rosales, Marc D., Duport, François, Schiellein, Julien, Polleux, Jean-Luc, Algani, Catherine, Rumelhard, Christian
Format Journal Article
LanguageEnglish
Published Cambridge, UK Cambridge University Press 01.12.2009
Subjects
Heterojunction bipolar phototransistors
SiGe
Si-based detectors
Opto-microwave gain mapping
HPT
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Summary:This paper presents measurement results providing the mapping of the opto-microwave transfer function performed on an SiGe microwave heterojunction phototransistor (HPT). This measurements will be used to extract a guideline for designing phototransistors. A mapping of the HPT's gain in low frequency helps to estimate the shape of the optical beam used for the measurement. The study also focuses on the cutoff frequency mapping of the device in phototransistor mode. Finally, these results are used to determine the general optimization rules in the SiGe HPTs design.
ISSN:1759-0787
1759-0795
DOI:10.1017/S1759078709990584