Hydride Vapor-Phase Epitaxy of a Semipolar AlN(102) Layer on a Nanostructured Si(100) Substrate

We propose a method for the synthesis of hexagonal AlN layer on Si(100) substrate with a V-groove nanostructured surface where the angle between the sloped nanoridge surface and Si(100) plane amounts to 47°. It is established that metalorganic hydride vapor-phase epitaxy (HVPE) on this substrate lea...

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Bibliographic Details
Published inTechnical physics letters Vol. 46; no. 1; pp. 59 - 61
Main Authors Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 2020
Springer Nature B.V
Subjects
Aluminum nitride
Classical and Continuum Physics
Hydrides
Nanostructure
Physics
Physics and Astronomy
Raman spectra
Silicon substrates
Vapor phase epitaxy
Raman spectroscopy
hydride vapor-phase epitaxy
semipolar aluminum nitride
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Summary:We propose a method for the synthesis of hexagonal AlN layer on Si(100) substrate with a V-groove nanostructured surface where the angle between the sloped nanoridge surface and Si(100) plane amounts to 47°. It is established that metalorganic hydride vapor-phase epitaxy (HVPE) on this substrate leads to the formation of semipolar AlN(10 2) layers having an X-ray rocking curve with a minimum FWHM value of ω θ ~ 60 arcmin. Raman spectra of this epilayer display additional peaks related to A 1 (TO) and E 1 (TO) phonons in contrast to the spectrum of a polar AlN(0001) layer containing an additional A 1 (LO) peak.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785020010174