Structural, electrical and photoluminescence properties of Er3+-doped SrBi4Ti4O15—Bi4Ti3O12 inter-growth ceramics

• Published in: Frontiers of materials science Vol. 13; no. 1; pp. 99 - 106
• Main Authors: Liu, Fang, Jiang, Xiangping, Chen, Chao, Nie, Xin, Huang, Xiaokun, Chen, Yunjing, Hu, Hao, Su, Chunyang
• Format: Journal Article
• Language: English
• Published: Beijing Higher Education Press 01.03.2019; Springer Nature B.V
• Subjects: Bismuth titanate; Ceramics; Chemical synthesis; Chemistry and Materials Science; Dielectric loss; Electrical resistivity; Materials Science; Optoelectronics; Perovskites; Photoluminescence; Piezoelectricity; Raman spectroscopy; Research Article; Substitution reactions; Upconversion; photoluminescence; electrical property; inter-growth structure; multifunctional optoelectronic material
• ISSN: 2095-025X; 2095-0268
• DOI: 10.1007/s11706-019-0454-3

Er 3+ -doped SrBi 4 Ti 4 O 15 -Bi 4 Ti 3 O 12 (SBT-BIT- x Er 3+ , x = 0.00, 0.05, 0.10, 0.15 and 0.20) inter-growth ceramics were synthesized by the solid-state reaction method. Structural, electrical and up-conversion properties of SBT-BIT- x Er 3+ were investigated. All samples showed a single phase of the orthorhombic structure. Raman spectroscopy indicated that the Er 3+ substitution for Bi 3+ at A sites of the pseudo-perovskite layer increases the lattice distortion of SBT-BIT- x Er 3+ ceramics. The substitution of Bi 3+ by Er 3+ leads to a decrease of dielectric loss tanδ and an increase of conductivity activation energy. Piezoelectric constant d 33 was slightly improved, but dielectric constant was decreased with the Er 3 + doping. The SBT-BIT- x Er 3+ ceramic with x = 0.15 exhibits the optimized electrical behavior ( d 33 ~17 pC/N, tanδ ~0.83%). Moreover, two bright green (532 and 548 nm) and one red (670 nm) emission bands were observed under the 980 nm excitation. Optimized emission intensity was also obtained when x = 0.15 for the SBT-BIT- x Er 3+ ceramic. Therefore, this kind of ceramics ought to be promising candidates for multifunctional optoelectronic applications.