In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz f τ and 256 GHz f max

• Published in: IEEE journal of the Electron Devices Society Vol. 8; pp. 930 - 934
• Main Authors: Markman, Brian, Suran Brunelli, Simone Tommaso, Goswami, Aranya, Guidry, Matthew, Rodwell, Mark J. W.
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020
• Subjects: Devices; Indium arsenides; Modulation; Quantum wells; Transconductance; Zirconium dioxide
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2020.3017141

An In0.53Ga0.47As/InAs composite channel MOS-HEMT exhibiting peak [Formula Omitted] GHz and peak [Formula Omitted] GHz is demonstrated. Additionally, another device exhibiting peak [Formula Omitted] GHz and peak [Formula Omitted] GHz is reported. The devices have a 1 nm / 3 nm AlxOyNz interfacial layer and ZrO2 gate dielectric on a 2 nm / 4 nm In0.53Ga0.47As / InAs composite channel with a modulation doped In0.52Al0.48As back barrier. To reduce parasitic gate-source and gate-drain capacitances, a modulation doped In0.52Al0.48As / In0.53Ga0.47As / InAs composite quantum well is included between the gate edges and the N+ source and drain. Compared to the work of Wu et al. , addition of an In0.52Al0.48As back-barrier, scaling of S/D metal spacing, and scaling of channel thickness has enabled improved transconductance and increased [Formula Omitted]. Short gate length devices [Formula Omitted] are limit by high [Formula Omitted] due to poor metal filling of the T-Gate stem and large [Formula Omitted] due to a conductive etch stop layer. Long gate length devices exhibit better metal filling, reduced [Formula Omitted], and balanced [Formula Omitted], [Formula Omitted]. Devices exhibit 10–15% DC-1 GHz [Formula Omitted] suggesting that the high-k / semiconductor interface has low [Formula Omitted].