Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-Ga₂O₃/p-Si Heterojunction

• Published in: IEEE electron device letters Vol. 45; no. 4; pp. 554 - 557
• Main Authors: Dong, Haoyan, Ma, Shufang, Niu, Yanping, Yang, Zhi, Zhang, Shuai, Hu, Yu, Hao, Xiaodong, Han, Bin, Li, Guoqiang, Dong, Hailiang, Xu, Bingshe
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Chemical vapor deposition; CVD; Density measurement; Electron tubes; Energy bands; Gallium oxides; Heterojunctions; Nanowires; Optical trapping; p-Si; Performance evaluation; Photodetectors; Photometers; Room temperature; Silicon substrates; solar-blind ultraviolet photodetector; Substrates; Ultraviolet detectors; β-Ga₂O₃ nanowires

Regular <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga2O3 nanowires were successfully prepared on the p-Si substrate via chemical vapor deposition. More significantly, a simple method was invented to prepare a heterojunction photod...