Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-Ga₂O₃/p-Si Heterojunction

• Published in: IEEE electron device letters Vol. 45; no. 4; pp. 554 - 557
• Main Authors: Dong, Haoyan, Ma, Shufang, Niu, Yanping, Yang, Zhi, Zhang, Shuai, Hu, Yu, Hao, Xiaodong, Han, Bin, Li, Guoqiang, Dong, Hailiang, Xu, Bingshe
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Chemical vapor deposition; CVD; Density measurement; Electron tubes; Energy bands; Gallium oxides; Heterojunctions; Nanowires; Optical trapping; p-Si; Performance evaluation; Photodetectors; Photometers; Room temperature; Silicon substrates; solar-blind ultraviolet photodetector; Substrates; Ultraviolet detectors; β-Ga₂O₃ nanowires
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2024.3368203

Regular <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga2O3 nanowires were successfully prepared on the p-Si substrate via chemical vapor deposition. More significantly, a simple method was invented to prepare a heterojunction photodetector of the <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga2O3 nanowire network/p-Si substrate. The photodetector exhibited excellent photodetection performance at room temperature, including a response/decay time of 30/20 ms, a high light on/off ratio of 5309, and a rectification ratio of 164.22, etc. The impact of the energy band structure between <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga2O3 nanowire and p-Si substrate, the large specific surface area and the optical trapping effect of nanowire network on the device performance were analyzed. Our research offers an original way to integrate <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga2O3 nanowires with the Si-based substrate.