Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

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Bibliographic Details
Published inRussian physics journal Vol. 49; no. 12; pp. 1334 - 1343
Main Authors Lavrentieva, L. G., Vilisova, M. D., Bobrovnikova, I. A., Ivonin, I. V., Preobrazhenskii, V. V., Chaldyshev, V. V.
Format Journal Article
LanguageEnglish
Published 01.12.2006
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ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-006-0263-x