Gain degradation mechanisms in wafer fused AlGaAs∕GaAs∕GaN heterojunction bipolar transistors
The authors have compared AlGaAs∕GaAs∕GaN heterojunction bipolar transistors (HBTs) formed by wafer fusion with AlGaAs∕GaAs∕GaAs as-grown HBTs subject to high temperature annealing conditions similar to those used in the wafer fusion process. The high temperature annealing alone is found to cause ga...
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| Published in | Applied physics letters Vol. 91; no. 6 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
06.08.2007
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| Online Access | Get full text |
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| Abstract | The authors have compared AlGaAs∕GaAs∕GaN heterojunction bipolar transistors (HBTs) formed by wafer fusion with AlGaAs∕GaAs∕GaAs as-grown HBTs subject to high temperature annealing conditions similar to those used in the wafer fusion process. The high temperature annealing alone is found to cause gain degradation by a factor of 2–6, a result of reduction in minority carrier lifetime in the base. Detailed analysis indicates that the fused HBTs also suffer from higher recombination in the emitter-base junction, exacerbated base degradation as well as effective potential barriers formed at the GaAs base/GaN collector junction. |
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| AbstractList | The authors have compared AlGaAs∕GaAs∕GaN heterojunction bipolar transistors (HBTs) formed by wafer fusion with AlGaAs∕GaAs∕GaAs as-grown HBTs subject to high temperature annealing conditions similar to those used in the wafer fusion process. The high temperature annealing alone is found to cause gain degradation by a factor of 2–6, a result of reduction in minority carrier lifetime in the base. Detailed analysis indicates that the fused HBTs also suffer from higher recombination in the emitter-base junction, exacerbated base degradation as well as effective potential barriers formed at the GaAs base/GaN collector junction. |
| Author | Lian, Chuanxin Xing, Huili Grace Wang, Chad S. McCarthy, Lee Brown, David |
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| CitedBy_id | crossref_primary_10_1063_1_2983648 crossref_primary_10_1002_pssc_200779307 crossref_primary_10_1007_s11664_025_11854_2 crossref_primary_10_1063_1_3662144 crossref_primary_10_1007_s11664_010_1397_8 crossref_primary_10_1002_pssc_200778660 crossref_primary_10_35848_1347_4065_ac3d45 crossref_primary_10_1063_5_0194526 |
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