Gain degradation mechanisms in wafer fused AlGaAs∕GaAs∕GaN heterojunction bipolar transistors

The authors have compared AlGaAs∕GaAs∕GaN heterojunction bipolar transistors (HBTs) formed by wafer fusion with AlGaAs∕GaAs∕GaAs as-grown HBTs subject to high temperature annealing conditions similar to those used in the wafer fusion process. The high temperature annealing alone is found to cause ga...

Full description

Saved in:
Bibliographic Details
Published inApplied physics letters Vol. 91; no. 6
Main Authors Lian, Chuanxin, Xing, Huili Grace, Wang, Chad S., Brown, David, McCarthy, Lee
Format Journal Article
LanguageEnglish
Published 06.08.2007
Online AccessGet full text

Cover

More Information
Summary:The authors have compared AlGaAs∕GaAs∕GaN heterojunction bipolar transistors (HBTs) formed by wafer fusion with AlGaAs∕GaAs∕GaAs as-grown HBTs subject to high temperature annealing conditions similar to those used in the wafer fusion process. The high temperature annealing alone is found to cause gain degradation by a factor of 2–6, a result of reduction in minority carrier lifetime in the base. Detailed analysis indicates that the fused HBTs also suffer from higher recombination in the emitter-base junction, exacerbated base degradation as well as effective potential barriers formed at the GaAs base/GaN collector junction.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2766961