Metal base transistor of In/Bi(Ba,Rb)O/sub 3//SrTiO/sub 3/ (Nb)

A metal-base transistor of the MOMOM type with large current gain is reported. It uses Bi(Ba,Rb)O/sub 3/ and oxide semiconductors. I-V curves for a Bi(Ba,Rb)O/sub 3/ base transistor in the common-base configuration were studied from room temperature to 30 K. Current gain alpha approximately 1 was ob...

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Bibliographic Details
Published inIEEE electron device letters Vol. 14; no. 3; pp. 100 - 102
Main Authors Abe, H., Toda, F., Ogiwara, M.
Format Journal Article
LanguageEnglish
Published IEEE 01.03.1993
Subjects
Electrodes
Gold
Indium
Niobium
Optical reflection
Schottky diodes
Semiconductor diodes
Substrates
Superconducting films
Temperature
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Summary:A metal-base transistor of the MOMOM type with large current gain is reported. It uses Bi(Ba,Rb)O/sub 3/ and oxide semiconductors. I-V curves for a Bi(Ba,Rb)O/sub 3/ base transistor in the common-base configuration were studied from room temperature to 30 K. Current gain alpha approximately 1 was obtained at 50 K. Transport behavior is determined by analysis of threshold voltages and derivatives dI/sub c//dV/sub cb/.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.215124