Picosecond-switching time of In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes measured by electro-optic sampling technique

To demonstrate picosecond-switching time for In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes (RTD's), we fabricated RTD's with various barrier widths and measured their switching times using electro-optic sampling technique specially arranged for RTD's with high current dens...

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Bibliographic Details
Published inIEEE electron device letters Vol. 16; no. 6; pp. 262 - 264
Main Authors Shimizu, N., Nagatsuma, T., Shinagawa, M., Waho, T.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.1995
Subjects
Current density
Electrodes
Integrated circuit measurements
Optical pulses
Pulse amplifiers
Resonant tunneling devices
Semiconductor device measurement
Time measurement
Transmission line measurements
Voltage
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Summary:To demonstrate picosecond-switching time for In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes (RTD's), we fabricated RTD's with various barrier widths and measured their switching times using electro-optic sampling technique specially arranged for RTD's with high current density. For an RTD having the barrier width of 1.4 nm with the peak current density of 4.5/spl times/10/sup 5/ A/cm/sup 2/ and peak-to-valley ratio of 3.9, the switching time of 2.2 ps has been observed.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.790729