Properties of 1.42.8 mu m/sup 2/ active area M-R elements

Densely packed magnetoresistive memory cells with active areas of 1.4*2.8 mu m/sup 2/ have been studied experimentally and compared to larger 2.0*12 mu m/sup 2/ cells. The experimental results show that the smaller cells, although having smaller output voltages (0.3 mV), have about the same statisti...

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Bibliographic Details
Published inIEEE transactions on magnetics Vol. 27; no. 6; pp. 5517 - 5519
Main Authors Granley, G.B., Daughton, J.M., Pohm, A.V., Comstock, C.S.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1991
Subjects
Bandwidth
Conducting materials
Contact resistance
Magnetic anisotropy
Magnetic materials
Magnetic separation
Perpendicular magnetic anisotropy
Saturation magnetization
Sheet materials
Testing
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Summary:Densely packed magnetoresistive memory cells with active areas of 1.4*2.8 mu m/sup 2/ have been studied experimentally and compared to larger 2.0*12 mu m/sup 2/ cells. The experimental results show that the smaller cells, although having smaller output voltages (0.3 mV), have about the same statistical distributions for critical parameters as the larger cells. Using the current nominal 1.2 mu m lithography prototype process, which adds one extra mask to the semiconductor processing, cells with an area of 12.6 mu m/sup 2/ are achieved. By adding another extra mask, the area can be reduced to 5.6 mu m/sup 2/.< >
ISSN:0018-9464
1941-0069
DOI:10.1109/20.278888