Exploiting Read Current Noise of TiO x Resistive Memory by Controlling Forming Conditions for Probabilistic Neural Network Hardware
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Published in | IEEE electron device letters Vol. 43; no. 9; pp. 1571 - 1574 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.09.2022
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Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/LED.2022.3192262 |