Exploiting Read Current Noise of TiO x Resistive Memory by Controlling Forming Conditions for Probabilistic Neural Network Hardware

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Bibliographic Details
Published inIEEE electron device letters Vol. 43; no. 9; pp. 1571 - 1574
Main Authors Choi, Wooseok, Ji, Wonjae, Heo, Seongjae, Lee, Donguk, Noh, Kyungmi, Lee, Chuljun, Woo, Jiyong, Kim, Seyoung, Hwang, Hyunsang
Format Journal Article
LanguageEnglish
Published 01.09.2022
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3192262