High Performance Electrically‐Injected InGaN Microdisk Lasers through Simultaneous Enhancement of Optical Confinement and Overlap Factor (Laser Photonics Rev. 18(8)/2024)

Electrically‐Injected InGaN Microdisk Lasers High Q, room‐temperature lasing in InGaN microdisk lasers under electrical injection is achieved through a thin‐film structure enhanced by a metallic undercut, which substantially improves optical confinement and overlap factor. Detailed analysis using ne...

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Bibliographic Details
Published inLaser & photonics reviews Vol. 18; no. 8
Main Authors Fu, Wai Yuen, Cheung, Yuk Fai, Choi, Hoi Wai
Format Journal Article
LanguageEnglish
Published Weinheim Wiley Subscription Services, Inc 01.08.2024
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Summary:Electrically‐Injected InGaN Microdisk Lasers High Q, room‐temperature lasing in InGaN microdisk lasers under electrical injection is achieved through a thin‐film structure enhanced by a metallic undercut, which substantially improves optical confinement and overlap factor. Detailed analysis using near‐field optical spectroscopy reveals strain relaxation near the edge plays a crucial role in reducing the Quantum Confined Stark Effect. This improvement in quantum efficiency has significant implications for the enhancement of lasing performance. For more details, see article number 2400047 by Wai Yuen Fu, Yuk Fai Cheung, and Hoi Wai Choi.
ISSN:1863-8880
1863-8899
DOI:10.1002/lpor.202470048