Praseodymium silicide formation at the Pr2O3/Si interface

• Published in: Applied surface science Vol. 255; no. 3; pp. 758 - 760
• Main Authors: WATAHIKI, Tatsuro, TINKHAM, Brad P, JENICHEN, Bernd, SHAYDUK, Roman, BRAUN, Wolfgang, PLOOG, Klaus H
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 30.11.2008
• Subjects: Condensed matter: structure, mechanical and thermal properties; Diffusion; interface formation; Exact sciences and technology; Interface structure and roughness; Physics; Single-crystal and powder diffraction; Solid surfaces and solid-solid interfaces; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); X-ray diffraction and scattering; Interfacial layer; 61.10.-i; Oxygen; 77.55.+f; Grazing incidence; Interdiffusion; XRD; 81.15.Hi; Silicide; 61.14.Hg; Film growth; Interface structure; Partial pressure; Siliconizing; High-k; Praseodymium oxides; Molecular beam epitaxy; Silicon; Praseodymium oxide
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2008.07.063

The interface and layer structure of praseodymium (Pr) oxide layers grown on Si(0 0 1) from a high-temperature effusion cell are studied using grazing incidence X-ray diffraction. Due to the interdiffusion of praseodymium and silicon atoms, Pr silicide forms in the layers. We find that Pr silicide is the favorable structure under oxygen deficient growth conditions in the Pr oxide layer. To avoid the silicidation, additional oxygen must be supplied. The formation of Pr silicide is suppressed for layers grown with an oxygen partial pressure of 10-7 mbar at a substrate temperature of 700 deg C.