Effect of low-frequency power on etching of SiCOH low-k films in CHF3 13.56MHz/2MHz dual-frequency capacitively coupled plasma

Saved in:
Bibliographic Details
Published inMicroelectronic engineering Vol. 86; no. 3; pp. 421 - 424
Main Authors Ye, Chao, Xu, Yijun, Huang, Xiaojiang, Xing, Zhenyu, Yuan, Jing, Ning, Zhaoyuan
Format Journal Article
LanguageEnglish
Japanese
Published 01.03.2009
Online AccessGet full text

Cover

Author Ning, Zhaoyuan
Huang, Xiaojiang
Xing, Zhenyu
Yuan, Jing
Ye, Chao
Xu, Yijun
Author_xml – sequence: 1
  givenname: Chao
  surname: Ye
  fullname: Ye, Chao
– sequence: 2
  givenname: Yijun
  surname: Xu
  fullname: Xu, Yijun
– sequence: 3
  givenname: Xiaojiang
  surname: Huang
  fullname: Huang, Xiaojiang
– sequence: 4
  givenname: Zhenyu
  surname: Xing
  fullname: Xing, Zhenyu
– sequence: 5
  givenname: Jing
  surname: Yuan
  fullname: Yuan, Jing
– sequence: 6
  givenname: Zhaoyuan
  surname: Ning
  fullname: Ning, Zhaoyuan
BookMark eNpNkL1OwzAcxD0UibbwAGx-gaT-24mdjChqCVJRB2C2HH-AS76IW6oy8OwkwMBypzudbvgt0KztWovQDZAYCPDVPm6sjSkhWQw0JkzM0HzsRZQzEJdoEcKejDkh2Rx9rZ2z-oA7h-vuFLnBvh9tq8-47052wF2L7UG_-vZlWjz6Ylf-7N6w83UTsG9xUW4YBhan_KH8XNFRsDmq-t-VVr3S_uA_bD2G7tjX1uC-VqFRV-jCqTrY6z9foufN-qkoo-3u7r643UYaUp5FmeO5rkyVVlZwTYyoLONAmc4rKlRqGDMcUpUIXgEkCpzJMpXQRBPqFM0VWyL4_dVDF8JgnewH36jhLIHICZrcyxGanKBJoHKExr4BRhJklw
CitedBy_id crossref_primary_10_1088_1009_0630_14_1_11
crossref_primary_10_1109_TSM_2014_2383832
crossref_primary_10_1088_0022_3727_46_43_435102
crossref_primary_10_1007_s00339_014_8619_5
crossref_primary_10_1016_j_tsf_2009_10_121
crossref_primary_10_1088_0963_0252_22_2_025011
crossref_primary_10_1088_1009_0630_12_4_11
crossref_primary_10_1088_1009_0630_12_5_12
crossref_primary_10_1109_TDEI_2013_6633691
crossref_primary_10_35848_1347_4065_acec56
crossref_primary_10_35848_1347_4065_abc106
crossref_primary_10_1063_1_4962005
crossref_primary_10_1088_1009_0630_15_10_19
crossref_primary_10_1166_sam_2022_4312
crossref_primary_10_35848_1347_4065_ac1eab
crossref_primary_10_35848_1347_4065_ac80ea
Cites_doi 10.1063/1.2945890
10.1088/0022-3727/40/13/007
10.1016/j.sse.2007.08.012
10.1016/j.tsf.2005.08.310
10.1016/j.apsusc.2007.02.008
10.1063/1.1534628
10.1088/0741-3335/48/12B/S10
10.1063/1.1562333
10.1016/S1369-7021(03)00052-X
10.1143/JJAP.47.1435
10.1063/1.2952838
10.1143/JJAP.33.4745
10.1088/0963-0252/16/3/002
10.1063/1.1567460
10.1063/1.2132514
10.1149/1.2430641
ContentType Journal Article
DBID AAYXX
CITATION
DOI 10.1016/j.mee.2008.12.037
DatabaseName CrossRef
DatabaseTitle CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EndPage 424
ExternalDocumentID 10_1016_j_mee_2008_12_037
GroupedDBID --K
--M
.~1
0R~
123
1B1
1RT
1~.
1~5
29M
4.4
457
4G.
5VS
7-5
71M
8P~
9JN
AABNK
AABXZ
AACTN
AAEDT
AAEDW
AAEPC
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAQXK
AAXKI
AAXUO
AAYFN
AAYXX
ABBOA
ABFNM
ABFRF
ABJNI
ABMAC
ABNEU
ABXDB
ABXRA
ACDAQ
ACFVG
ACGFO
ACGFS
ACNNM
ACRLP
ACZNC
ADBBV
ADEZE
ADJOM
ADMUD
ADTZH
AEBSH
AECPX
AEFWE
AEKER
AENEX
AEZYN
AFFNX
AFJKZ
AFKWA
AFRZQ
AFTJW
AGHFR
AGUBO
AGYEJ
AHHHB
AHJVU
AHZHX
AIALX
AIEXJ
AIKHN
AITUG
AIVDX
AJOXV
AKRWK
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
AOUOD
ASPBG
AVWKF
AXJTR
AZFZN
BBWZM
BJAXD
BKOJK
BLXMC
CITATION
CS3
DU5
EBS
EFJIC
EJD
EO8
EO9
EP2
EP3
F0J
FDB
FEDTE
FGOYB
FIRID
FNPLU
FYGXN
G-2
G-Q
G8K
GBLVA
GBOLZ
HLZ
HMV
HVGLF
HX~
HZ~
IHE
J1W
JJJVA
KOM
LG9
LY7
M24
M38
M41
MAGPM
MO0
N9A
NDZJH
O-L
O9-
OAUVE
OGIMB
OZT
P-8
P-9
P2P
PC.
Q38
R2-
RIG
RNS
ROL
RPZ
SBC
SDF
SDG
SDP
SES
SET
SEW
SMS
SPC
SPCBC
SPD
SPG
SSM
SSQ
SST
SSV
SSZ
T5K
UHS
WUQ
ZMT
~G-
ID FETCH-LOGICAL-c1568-8f69cbdb5be76c0d7be36123c9b27a5d33d615a476b114a1fd88a424c02fa29a3
ISSN 0167-9317
IngestDate Thu Sep 26 16:10:06 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue 3
Language English
Japanese
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c1568-8f69cbdb5be76c0d7be36123c9b27a5d33d615a476b114a1fd88a424c02fa29a3
PageCount 4
ParticipantIDs crossref_primary_10_1016_j_mee_2008_12_037
PublicationCentury 2000
PublicationDate 2009-3-00
PublicationDateYYYYMMDD 2009-03-01
PublicationDate_xml – month: 03
  year: 2009
  text: 2009-3-00
PublicationDecade 2000
PublicationTitle Microelectronic engineering
PublicationYear 2009
References Sankaran (10.1016/j.mee.2008.12.037_bib12) 2003; 82
Shamiryan (10.1016/j.mee.2008.12.037_bib1) 2004; 7
Eon (10.1016/j.mee.2008.12.037_bib6) 2007; 40
Huang (10.1016/j.mee.2008.12.037_bib15) 2008; 15
Miyauchi (10.1016/j.mee.2008.12.037_bib9) 2007; 51
Tatsumi (10.1016/j.mee.2008.12.037_bib7) 2007; 253
Qayyum (10.1016/j.mee.2008.12.037_bib11) 2005; 98
Li (10.1016/j.mee.2008.12.037_bib16) 2008; 93
Ye (10.1016/j.mee.2008.12.037_bib4) 2007; 154
Ishihara (10.1016/j.mee.2008.12.037_bib8) 2006; 48
Maex (10.1016/j.mee.2008.12.037_bib2) 2003; 93
Takahashi (10.1016/j.mee.2008.12.037_bib13) 1994; 33
Abe (10.1016/j.mee.2008.12.037_bib5) 2008; 47
Chingsungnoen (10.1016/j.mee.2008.12.037_bib14) 2007; 16
Ye (10.1016/j.mee.2008.12.037_bib10) 2006; 496
Grill (10.1016/j.mee.2008.12.037_bib3) 2003; 93
References_xml – volume: 93
  start-page: 031504
  year: 2008
  ident: 10.1016/j.mee.2008.12.037_bib16
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2945890
  contributor:
    fullname: Li
– volume: 40
  start-page: 3951
  year: 2007
  ident: 10.1016/j.mee.2008.12.037_bib6
  publication-title: J. Phys. D: Appl. Phys.
  doi: 10.1088/0022-3727/40/13/007
  contributor:
    fullname: Eon
– volume: 51
  start-page: 1418
  year: 2007
  ident: 10.1016/j.mee.2008.12.037_bib9
  publication-title: Solid-State Electron.
  doi: 10.1016/j.sse.2007.08.012
  contributor:
    fullname: Miyauchi
– volume: 496
  start-page: 221
  year: 2006
  ident: 10.1016/j.mee.2008.12.037_bib10
  publication-title: Thin Solid Films
  doi: 10.1016/j.tsf.2005.08.310
  contributor:
    fullname: Ye
– volume: 253
  start-page: 6716
  year: 2007
  ident: 10.1016/j.mee.2008.12.037_bib7
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2007.02.008
  contributor:
    fullname: Tatsumi
– volume: 93
  start-page: 1785
  year: 2003
  ident: 10.1016/j.mee.2008.12.037_bib3
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1534628
  contributor:
    fullname: Grill
– volume: 48
  start-page: B99
  year: 2006
  ident: 10.1016/j.mee.2008.12.037_bib8
  publication-title: Plasma Phys. Controlled Fusion
  doi: 10.1088/0741-3335/48/12B/S10
  contributor:
    fullname: Ishihara
– volume: 82
  start-page: 1824
  year: 2003
  ident: 10.1016/j.mee.2008.12.037_bib12
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1562333
  contributor:
    fullname: Sankaran
– volume: 7
  start-page: 34
  year: 2004
  ident: 10.1016/j.mee.2008.12.037_bib1
  publication-title: Mater. Today
  doi: 10.1016/S1369-7021(03)00052-X
  contributor:
    fullname: Shamiryan
– volume: 47
  start-page: 1435
  year: 2008
  ident: 10.1016/j.mee.2008.12.037_bib5
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.47.1435
  contributor:
    fullname: Abe
– volume: 15
  start-page: 073501
  year: 2008
  ident: 10.1016/j.mee.2008.12.037_bib15
  publication-title: Phys. Plasma
  doi: 10.1063/1.2952838
  contributor:
    fullname: Huang
– volume: 33
  start-page: 4745
  year: 1994
  ident: 10.1016/j.mee.2008.12.037_bib13
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.33.4745
  contributor:
    fullname: Takahashi
– volume: 16
  start-page: 434
  year: 2007
  ident: 10.1016/j.mee.2008.12.037_bib14
  publication-title: Plasma Sources Sci. Technol.
  doi: 10.1088/0963-0252/16/3/002
  contributor:
    fullname: Chingsungnoen
– volume: 93
  start-page: 8793
  year: 2003
  ident: 10.1016/j.mee.2008.12.037_bib2
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1567460
  contributor:
    fullname: Maex
– volume: 98
  start-page: 103303
  year: 2005
  ident: 10.1016/j.mee.2008.12.037_bib11
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.2132514
  contributor:
    fullname: Qayyum
– volume: 154
  start-page: G63
  year: 2007
  ident: 10.1016/j.mee.2008.12.037_bib4
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.2430641
  contributor:
    fullname: Ye
SSID ssj0016408
Score 1.8879633
SourceID crossref
SourceType Aggregation Database
StartPage 421
Title Effect of low-frequency power on etching of SiCOH low-k films in CHF3 13.56MHz/2MHz dual-frequency capacitively coupled plasma
Volume 86
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LaxsxEBZuekkPoY-UJn2gQ08169ha7etYTMNSSHpoAksuRk-6jrNrgpeSHPI3-nc7euzDaQtNLlpbyML2fIxmRt_MIPRRMsq15lmgqKABlYkOMgJDQqcikiRU3HZvODmN83P6tYiK0ejXgLXUbPhE3P41r-QxUoU5kKvJkn2AZLtNYQJeg3xhBAnD-F8y9qWHwd5b1T8Dfe1o0TfjtWl9Zq4BjEw8rfl7Of-W23WXphjTleXBzvPjcDwLJ1F8kt-arA14jE121mAzAcepsAyjFbypm_UKbNQ1GN1eo7ftoAyzb9BUR_WFDvu4rL_gr9uZorFHQLlsqh5fPoJdlKxeAni7jxe-_crFD1XdNFvhiqzna7URTNDMWegSNlsV7Kthl0MP3epT6tKn_dFMXbr1H1rfBSCWkyulHDvWBHhdLZntCtv3Tr6Oj9hS3ZYL2MJ15pyRBWzxBD0loMEMV3By13GHwMW0rQ6739Jel1vi4L1vMTB4BpbL2XO0510O_Nnh5wUaqeolejYoRPkK3Tkk4VrjLSRhiyRcV9gjyaywSLLrLrFFEi4rbJCEWyQdGRzhbRzhIY6wxxF2ONpH58dfzuZ54DtzBAL8_TRIdZwJLnnEVRKLqUy4Ck0dH5FxkrBIhqEES5nRJObgb7OZlmnKQHpiSjQjGQtfo52qrtQbhAWnEdOJUJIJMKgoj-BBWKwyolKlpgfoU_v3LdauAMvin-I6fMjit2i3B-g7tLO5btR7sDA3_IOV9m9MHnyZ
link.rule.ids 315,783,787,27938,27939
linkProvider Elsevier
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Effect+of+low-frequency+power+on+etching+of+SiCOH+low-k+films+in+CHF3+13.56MHz%2F2MHz+dual-frequency+capacitively+coupled+plasma&rft.jtitle=Microelectronic+engineering&rft.au=Ye%2C+Chao&rft.au=Xu%2C+Yijun&rft.au=Huang%2C+Xiaojiang&rft.au=Xing%2C+Zhenyu&rft.date=2009-03-01&rft.issn=0167-9317&rft.volume=86&rft.issue=3&rft.spage=421&rft.epage=424&rft_id=info:doi/10.1016%2Fj.mee.2008.12.037&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_mee_2008_12_037
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0167-9317&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0167-9317&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0167-9317&client=summon