Current Detection Circuit in Multiple Parallel Connection Circuit of High-Power Semiconductor Modules

We are developing current-detection technology that directly measures the main current of a high-power semiconductor module using the wiring inductance of the module. In a previous study, we proposed a circuit that detects current by integrating the voltage generated in the wiring inductance between...

Full description

Saved in:
Bibliographic Details
Published inIEEJ JOURNAL OF INDUSTRY APPLICATIONS Vol. 141; no. 7; p. 542
Main Authors Katoh, Miyu, Nagasu, Masahiro, Suzuki, Sosuke, Inaba, Masamitsu, Ishikawa, Katsumi, 美夕, 加藤, 正浩, 長洲, 宗佑, 鈴木, 政光, 稲葉, 勝美, 石川
Format Journal Article
LanguageJapanese
Published Tokyo Japan Science and Technology Agency 01.07.2021
Subjects
Circuits
Electric potential
Emitters
Impedance
Inductance
Insulated gate bipolar transistors
Modules
Semiconductor devices
Voltage
Wiring
Online AccessGet full text

Cover

More Information
Summary:We are developing current-detection technology that directly measures the main current of a high-power semiconductor module using the wiring inductance of the module. In a previous study, we proposed a circuit that detects current by integrating the voltage generated in the wiring inductance between the sense emitter and emitter terminals of the IGBT (Insulated Gate Bipolar Transistor) module. In this study, we developed a total current detection scheme for parallel-connected modules. The basic principle of this scheme is that the total current can be obtained by the total of each voltage generated on the wiring inductance of each module. It was realized by using only one integrating circuit. A challenge for this study was avoiding reflection caused by impedance mismatch. We addressed this by adding a termination resistance with the same value as the characteristic impedance.
ISSN:2187-1094
2187-1108
DOI:10.1541/ieejias.141.542