The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

The effects of base dopant outdiffusion and nominally undoped Si/sub 1-x/Ge/sub x/ spacer layers at the junction interfaces of Si/Si/sub 1-x/Ge/sub x//Si n-p-n heterojunction bipolar transistors (HBTs) have been studied. It has been found that small amounts of boron outdiffusion from heavily doped b...

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Bibliographic Details
Published inIEEE electron device letters Vol. 12; no. 2; pp. 42 - 44
Main Authors Prinz, E.J., Garone, P.M., Schwartz, P.V., Xiao, X., Sturm, J.C.
Format Journal Article
LanguageEnglish
Published IEEE 01.02.1991
Subjects
Bipolar transistors
Boron
Degradation
Doping
Electron emission
Germanium silicon alloys
Heterojunction bipolar transistors
Photonic band gap
Silicon germanium
Voltage
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Summary:The effects of base dopant outdiffusion and nominally undoped Si/sub 1-x/Ge/sub x/ spacer layers at the junction interfaces of Si/Si/sub 1-x/Ge/sub x//Si n-p-n heterojunction bipolar transistors (HBTs) have been studied. It has been found that small amounts of boron outdiffusion from heavily doped bases of nonabrupt interfaces cause parasitic barriers in the conduction band, which drastically reduce the collector current enhancement in the HBTs. Undoped interface spacers can remove the parasitic barriers, resulting in a strongly improved collector current enhancement.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.75698