InP-based inverted high electron mobility transistors

Summary form only given. The fabrication and characterisation of an inverted high-electron-mobility transistor (HEMT) in the AlInAs/GaInAs-on-InP material system are reported. Inverted HEMTs, which have the donor layer beneath the channel, have the potential for higher transconductance, current gain...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on electron devices Vol. 38; no. 12; p. 2702
Main Authors Schmitz, A.E., Nguyen, L.D., Brown, A.S., Metzger, R.A.
Format Journal Article
LanguageEnglish
Published IEEE 01.12.1991
Subjects
Electron devices
Gallium arsenide
HEMTs
MODFETs
Online AccessGet full text

Cover

More Information
Summary:Summary form only given. The fabrication and characterisation of an inverted high-electron-mobility transistor (HEMT) in the AlInAs/GaInAs-on-InP material system are reported. Inverted HEMTs, which have the donor layer beneath the channel, have the potential for higher transconductance, current gain cutoff frequency, and power gain cutoff frequency than conventional HEMTs because the gate can be placed closer to the two-dimensional electron gas (2DEG).< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.158723