Application of experimental and numerical simulation methods for studies of the dry groove silicon etching process

A physical-chemical silicon etching model is described; an etching profile is calculated by the string method; and model adequacy is considered. The simulation results of the groove etching process as function of process optimization parameter variations are analyzed.

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Bibliographic Details
Published inRussian microelectronics Vol. 41; no. 7; pp. 370 - 375
Main Author Galperin, V. A.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.12.2012
Subjects
Electrical Engineering
Engineering
RUSSIAN Microelectronics
Numerical Simulation Method
Silicon Etching
Etching Profile
Etching Rate
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Summary:A physical-chemical silicon etching model is described; an etching profile is calculated by the string method; and model adequacy is considered. The simulation results of the groove etching process as function of process optimization parameter variations are analyzed.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739712070050