Effect of Rare-Earth Doping on Structural and Luminescent Properties of Screen-Printed ZnO Films

• Published in: ECS transactions Vol. 66; no. 1; pp. 321 - 332
• Main Authors: Khomenkova, L., Kushnirenko, V.I., Osipyonok, N.M., Singaevsky, A.F., Pekar, G.S., Avramenko, K., Strelchuk, V.V., Borkovska, L.V.
• Format: Journal Article
• Language: English
• Published: 13.04.2015
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/06601.0321ecst

The effect of Sm 3+ and/or Ho 3+ doping on structural and luminescent properties of screen-printed ZnO films sintered at 1000°C was investigated by photoluminescence (PL), PL excitation and Raman scattering methods. For all the films, ultraviolet excitonic and visible defect-related PL bands of ZnO were detected. The doping with Ho 3+ ions produced an enhancement of PL in ZnO films, the excitonic PL intensity being increased prominently, while the co-doping with Sm 3+ and Ho 3+ ions resulted in PL decrease in ZnO films. Only for (Sm,Ho)- co-doped ZnO films, the rare-earth PL bands were detected. The reduction of Sm 3+ to Sm 2+ was observed demonstrating 5 D 0 → 7 F J radiative transitions. The mechanism of PL and PL excitation is discussed in terms of the formation of rare-earth complexes as well as energy transfer towards them from ZnO host.