Structural characterization of CuInS 2 thin films from Cu–In metal inks

Abstract We report the structural characterization of CuInS 2 thin films based on Cu–In metal inks. CuInS 2 films from the precursor films with different Cu/In ratios were sulfurized and investigated by SEM, XRD, Raman, and XPS. Morphological and compositional changes before and after etching of CuS...

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Published inPhysica status solidi. A, Applications and materials science Vol. 208; no. 10; pp. 2399 - 2405
Main Authors Chen, Guanbi, Wang, Lei, Sheng, Xia, Chang, Lantao, Luo, Yeping, Yang, Deren
Format Journal Article
LanguageEnglish
Published 01.10.2011
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Summary:Abstract We report the structural characterization of CuInS 2 thin films based on Cu–In metal inks. CuInS 2 films from the precursor films with different Cu/In ratios were sulfurized and investigated by SEM, XRD, Raman, and XPS. Morphological and compositional changes before and after etching of CuS impurity phase were also compared. By ex situ characterization of the CuInS 2 films sulfurized at different temperatures, an established mechanism is proposed to explain the sulfurization process. The sulfurization is a diffusion‐limited process, in which the diffusion rate differences of Cu and In control the intermediate phases. Moreover, the Cu/In ratio and sulfurization temperature determine the morphological and structural qualities of the CuInS 2 films.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201026782