Variation of Chemical Vapor Deposited SiO 2 Density Due to Generation and Shrinkage of Open Space During Thermal Annealing

Chemical vapor deposited (CVD) SiO 2 using tetraethoxysilane has a low density compared with thermally grown SiO 2 , and the as-deposited film contains impurities. In addition, compressive stress exists in the Si–O–Si network. In this work, CVD SiO 2 films annealed with various thermal budgets were...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 51; no. 2R; p. 21101
Main Authors Sometani, Mitsuru, Hasunuma, Ryu, Ogino, Masaaki, Kuribayashi, Hitoshi, Sugahara, Yoshiyuki, Uedono, Akira, Yamabe, Kikuo
Format Journal Article
LanguageEnglish
Published 01.02.2012
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Summary:Chemical vapor deposited (CVD) SiO 2 using tetraethoxysilane has a low density compared with thermally grown SiO 2 , and the as-deposited film contains impurities. In addition, compressive stress exists in the Si–O–Si network. In this work, CVD SiO 2 films annealed with various thermal budgets were evaluated using ellipsometry. Positron annihilation spectroscopy indicated that the desorption of residual impurities by thermal annealing generates open spaces in the films. Subsequent annealing shrinks the open spaces and relaxes the compressive stress with reconstruction of the Si–O–Si network. Consequently, the refractive index of CVD SiO 2 shows turn-around characteristics with increasing annealing temperature.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.51.021101