Effects of electron-phonon interaction on impurity states in [formula omitted] quantum wells under electric fields

Effects of electron-phonon interaction on the ground state of a donor in ZnSe ZnCdSe quantum wells under external electric fields are studied theoretically for the impurity atom doped at various positions. Both the interface and confined phonon modes that exist in such structures are included to int...

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Published inSolid state communications Vol. 104; no. 5; pp. 281 - 285
Main Authors Huang, Z.H., Liang, S.D., Chen, C.Y., Lin, D.L.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.11.1997
Subjects
electron-phonon interactions
impurities in semiconductors
quantum wells
semiconductors
A
C
D
semiconductors
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Summary:Effects of electron-phonon interaction on the ground state of a donor in ZnSe ZnCdSe quantum wells under external electric fields are studied theoretically for the impurity atom doped at various positions. Both the interface and confined phonon modes that exist in such structures are included to interact with the electron. The ground state energy is calculated by means of the Lee, Low and Pines transformation. The polaronic effects are generally much more significant than those in III–V compounds we have found in the past due to stronger electron-phonon interactions. Contributions from different phonon modes are computed separately and results obtained for various cases are presented and discussed.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(97)00288-3