Design, fabrication and characterization of high density radiation hardened SONOS/CMOS EEPROMs for space and military systems

We present the design, fabrication and characterization of a radiation-hardened, SONOS/CMOS 1 Mb EEPROM for space and military systems. An advanced 0.35micron, 4-level tungsten plug, CMP, high-density interconnect SONOS/CMOS technology will be described for 16 Mb SONOS/CMOS EEPROMs. SONOS/CMOS radia...

Full description

Saved in:
Bibliographic Details
Published inProceedings. 2004 IEEE Computational Systems Bioinformatics Conference pp. 60 - 65
Main Authors Adams, D.A., Smith, J.T., Murray, J.R., White, M.H., Wrazien, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
Subjects
CMOS technology
EPROM
Fabrication
Laboratories
Nonvolatile memory
Radiation hardening
Silicon on insulator technology
SONOS devices
Space missions
Space technology
Online AccessGet full text

Cover

More Information
Summary:We present the design, fabrication and characterization of a radiation-hardened, SONOS/CMOS 1 Mb EEPROM for space and military systems. An advanced 0.35micron, 4-level tungsten plug, CMP, high-density interconnect SONOS/CMOS technology will be described for 16 Mb SONOS/CMOS EEPROMs. SONOS/CMOS radiation-hardened EEPROMs are flight-qualified and currently employed in advanced space-borne and military systems.
ISBN:9780780387263
0780387260
DOI:10.1109/NVMT.2004.1380805