Recent Development in Polymer Ferroelectric Field Effect Transistor Memory

The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroe...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 8; no. 1; pp. 51 - 65
Main Authors Park, Youn-Jung, Jeong, Hee-June, Chang, Ji-Youn, Kang, Seok-Ju, Park, Cheol-Min
Format Journal Article
LanguageEnglish
Published 대한전자공학회 30.03.2008
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Summary:The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroelectric/metal type capacitor, metalferroelectric-insulator-semiconductor (MFIS) and ferroelectric field effect transistor (FeFET) with ferroelectric poly vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). In addition, various material and process issues for realization of polymer ferroelectric non-volatile memory are discussed, including the control of crystal polymorphs, film thickness, crystallization and crystal orientation and the unconventional patterning techniques. KCI Citation Count: 3
Bibliography:G704-002163.2008.8.1.005
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2008.8.1.051