Recent progress in spin-orbit torque magnetic random-access memory

Abstract Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review recent advancements in perpendicular SOT...

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Bibliographic Details
Published innpj Spintronics Vol. 2; no. 1; pp. 1 - 15
Main Authors V. D. Nguyen, S. Rao, K. Wostyn, S. Couet
Format Journal Article
LanguageEnglish
Published Nature Portfolio 01.10.2024
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Summary:Abstract Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review recent advancements in perpendicular SOT-MRAM devices, emphasizing on material developments to enhance charge-spin conversion efficiency and large-scale device integration strategies. We also discuss the remaining challenges in achieving a single device with low switching current, reliable field free switching to unlock the full potential of SOT-MRAM technology.
ISSN:2948-2119
DOI:10.1038/s44306-024-00044-1