Enhanced performance in organic photovoltaic devices with a KMnO4 solution treated indium tin oxide anode modification

The properties of poly(3-hexylthiophene):(6,6)-phenyl C61 butyric acid methyl ester (P3HT:PCBM) organic pho- tovoltaic devices (OPVs) with an indium tin oxide (ITO) anode treated by a KMnO4 solution are investigated. The optimized KMnO4 solution has a concentration of 50 rag/L, and ITO is treated fo...

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Published in中国物理B:英文版 Vol. 21; no. 12; pp. 526 - 530
Main Author 杨倩倩 赵谡玲 徐征 张福俊 闫光 孔超 樊星 张妍斐 徐叙瑢
Format Journal Article
LanguageEnglish
Published 01.12.2012
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/21/12/128402

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Summary:The properties of poly(3-hexylthiophene):(6,6)-phenyl C61 butyric acid methyl ester (P3HT:PCBM) organic pho- tovoltaic devices (OPVs) with an indium tin oxide (ITO) anode treated by a KMnO4 solution are investigated. The optimized KMnO4 solution has a concentration of 50 rag/L, and ITO is treated for 15 min. The modification of ITO anode results in an enhancement of the power conversion efficiency (PCE) of the device, which is responsible for the increase of the photocurrent. The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO4, and then the charge collection efficiency is improved.
Bibliography:The properties of poly(3-hexylthiophene):(6,6)-phenyl C61 butyric acid methyl ester (P3HT:PCBM) organic pho- tovoltaic devices (OPVs) with an indium tin oxide (ITO) anode treated by a KMnO4 solution are investigated. The optimized KMnO4 solution has a concentration of 50 rag/L, and ITO is treated for 15 min. The modification of ITO anode results in an enhancement of the power conversion efficiency (PCE) of the device, which is responsible for the increase of the photocurrent. The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO4, and then the charge collection efficiency is improved.
11-5639/O4
organic photovoltaic devices, indium tin oxide, anode modification, KMnO4
Yang Qian-Qian, Zhao Su-Ling, Xu Zheng, Zhang Fu-Jun, Yan Guang Zong Chao, Fan Xing, Zhang Yan-Fei, and Xu Xu-Rong a) Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 10004,1, China b) Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/21/12/128402