The 3rd generation IGBT toward a limitation of IGBT performance

The performance of the third-generation IGBT (insulated-gate bipolar transistor) is described. It is demonstrated that a 600-V/100-A third-generation IGBT has an on-state voltage drop of about 1.7 V and a fall-time of about 150 ns during inductive-load turn-off, which is very close to the limit of I...

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Bibliographic Details
Published in[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs pp. 24 - 29
Main Authors Otsuki, M., Momota, S., Nishiura, A., Sakurai, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1993
Subjects
Circuits
Home appliances
Insulated gate bipolar transistors
Low voltage
Metalworking machines
Motor drives
Numerical simulation
Performance loss
Production facilities
Voltage control
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Summary:The performance of the third-generation IGBT (insulated-gate bipolar transistor) is described. It is demonstrated that a 600-V/100-A third-generation IGBT has an on-state voltage drop of about 1.7 V and a fall-time of about 150 ns during inductive-load turn-off, which is very close to the limit of IGBT performance predicted by numerical simulation. The device has overcurrent protection, and an average short circuit withstand capability of 30 mu s was obtained. An almost 40% reduction in the switching loss has been realized, as compared with conventional IGBT modules, for a PWM (pulse width modulated) inverter application.< >
ISBN:9780780313132
0780313135
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.1993.297101