Impedance spectroscopy and relaxation phenomena of (Na,K) excess Na0.5K0.5NbO3 thin films grown by chemical solution deposition

Na0.5K0.5NbO3 (NKN) and 10mol% (Na,K) excess Na0.5K0.5NbO3 (NKN10) thin films on Pt/Ti/SiO2/Si substrate were prepared by chemical solution deposition. Crystallization of NKN10 thin films was confirmed by X-ray diffraction. The (Na,K) excess Na0.5K0.5NbO3 thin film shows a ferroelectric P-E hysteres...

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Published inThin solid films Vol. 519; no. 2; pp. 947 - 951
Main Authors Lee, Sun Young, Kim, Jin Soo, Ahn, Chang Won, In Hwang, Hak, Kim, Ill Won
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.11.2010
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Summary:Na0.5K0.5NbO3 (NKN) and 10mol% (Na,K) excess Na0.5K0.5NbO3 (NKN10) thin films on Pt/Ti/SiO2/Si substrate were prepared by chemical solution deposition. Crystallization of NKN10 thin films was confirmed by X-ray diffraction. The (Na,K) excess Na0.5K0.5NbO3 thin film shows a ferroelectric P-E hysteresis loop. Dielectric properties and impedance spectroscopy of thin films were investigated in the frequency range from 0.1Hz to 100kHz and the temperature range of 25~500AC. By analyzing the complex impedance relaxation with Cole-Cole plots, we found impedance relaxations for the thin film. The contribution of electrical conduction is discussed in relation to grain, grain boundary, and interface effects.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2010.08.133