Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023)

Ferroelectric Field‐Effect TransistorsBecause of their simple structure and operation scheme based on characteristic spontaneous polarization, ferroelectric field‐effect‐transistors (FeFETs), which are reviewed by Jinseong Heo, Min Hyuk Park, and co‐workers in article number 2204904, are considered...

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 35; no. 43
Main Authors Park, Ju Yong, Choe, Duk‐Hyun, Lee, Dong Hyun, Yu, Geun Taek, Yang, Kun, Kim, Se Hyun, Park, Geun Hyeong, Nam, Seung‐Geol, Lee, Hyun Jae, Jo, Sanghyun, Kuh, Bong Jin, Ha, Daewon, Kim, Yongsung, Heo, Jinseong, Park, Min Hyuk
Format Journal Article
LanguageEnglish
Published Weinheim Wiley Subscription Services, Inc 01.10.2023
Subjects
Ferroelectric materials
Ferroelectricity
Fluorite
Information storage
Materials science
Power efficiency
Transistors
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Summary:Ferroelectric Field‐Effect TransistorsBecause of their simple structure and operation scheme based on characteristic spontaneous polarization, ferroelectric field‐effect‐transistors (FeFETs), which are reviewed by Jinseong Heo, Min Hyuk Park, and co‐workers in article number 2204904, are considered promising for ultrahigh‐density information storage with high speed and power efficiency. A post‐3D‐NAND structure based on the FeFET is shown.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.202370312