Structural Characteristics of Bi2Te3 and Sb2Te3 films on (001) GaAs Substrates grown by MOCVD

Metal organic vapour phase epitaxy has been investigated for growth of Bi 2 Te 3 and Sb 2 Te 3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. High resolution TEM and X-ray diffraction patterns revealed that films had single...

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Bibliographic Details
Published in2006 25th International Conference on Thermoelectrics pp. 411 - 413
Main Authors Jeong-Hun Kim, Sung-Do Kwon, Dae-Yong Jeong, Byeong-Kwon Ju, Seok-Jin Yoon, Jin-Sang Kim
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2006
Subjects
Bismuth
Bonding
Crystalline materials
Crystallization
Epitaxial growth
Gallium arsenide
MOCVD
Substrates
Tellurium
X-ray diffraction
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Summary:Metal organic vapour phase epitaxy has been investigated for growth of Bi 2 Te 3 and Sb 2 Te 3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. High resolution TEM and X-ray diffraction patterns revealed that films had single crystalline phases with a preferential c-orientation and layered structures resulting from the van der Waals bonding nature in these materials. By optimizing growth parameters such as precursor ratio, growth temperatures, and flow rate in reactor, we could obtain Seebeck coefficient of -160muVK -1 for Bi 2 Te 3 and +110muVK -1 for Sb 2 Te 3 films, respectively. The high Seebeck coefficient and atomistically smooth surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi 2 Te 3 /Sb 2 Te 3 super lattice structures for thin film thermoelectric device applications
ISBN:9781424408108
1424408105
ISSN:1094-2734
DOI:10.1109/ICT.2006.331284