Information on the confinement potential in [formula omitted] wires from magnetoluminescence experiments

Shallow etched wires, dots and antidots have been prepared from remote-doped GaAs AlGaAs quantum wells. The luminescence of electrons and holes separated into adjacent lateral regions was studied with a magnetic field applied in the growth direction. The spatially indirect luminescence was found to...

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Bibliographic Details
Published inSurface science Vol. 305; no. 1; pp. 591 - 596
Main Authors Hirler, F., Strenz, R., Küchler, R., Abstreiter, G., Böhm, G., Weiman, G.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.1994
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Summary:Shallow etched wires, dots and antidots have been prepared from remote-doped GaAs AlGaAs quantum wells. The luminescence of electrons and holes separated into adjacent lateral regions was studied with a magnetic field applied in the growth direction. The spatially indirect luminescence was found to shift in energy and become direct at high magnetic fields. Details of the shape of the confinement potential were obtained by simulating the energy shift numerically.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(94)90959-8