Diffusion induced disordering (DID) in [formula omitted] superlattices

Thermally induced disordering of ZnSSeZnSe superlattices was studied by X-ray diffraction, secondary-ion-mass-spectroscopy and cathodoluminescence. The structures were grown by MOVPE and annealed in H2- or Se-atmosphere. The superlattices are found to be stable up to 750°C in H2-atmosphere whereas a...

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Published inJournal of crystal growth Vol. 159; no. 1-4; pp. 514 - 517
Main Authors Kuttler, M., Grundmann, M., Heitz, R., Pohl, U.W., Bimberg, D., Stanzel, H., Hahn, B., Gebhardt, W.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 02.02.1996
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Summary:Thermally induced disordering of ZnSSeZnSe superlattices was studied by X-ray diffraction, secondary-ion-mass-spectroscopy and cathodoluminescence. The structures were grown by MOVPE and annealed in H2- or Se-atmosphere. The superlattices are found to be stable up to 750°C in H2-atmosphere whereas a heat treatment in Se-atmosphere at 590°C leads to a complete intermixing. A Si3N4 cap was used to protect the superlattice from the Se-atmosphere and to achieve a laterally structured intermixing of the superlattice. The effect of lateral intermixing is demonstrated by spatially resolved cathodoluminescence.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(95)00809-8