[formula omitted], g- r and burst noise induced by emitter-edge dislocations in bipolar transistors

Noise measurements conducted on npn bipolar transistors have revealed that the emitter-edge dislocations give rise to both 1 f and g-r noise, the resulting noise increasing with the number of dislocations. In dislocated devices, an α ⋍ 1.8 × 10 −4 has been found which accounts for the base 1/ f nois...

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Bibliographic Details
Published inSolid-state electronics Vol. 27; no. 7; pp. 675 - 676
Main Authors Mihaila, M., Amberiadis, K., van der Ziel, A.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.07.1984
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Summary:Noise measurements conducted on npn bipolar transistors have revealed that the emitter-edge dislocations give rise to both 1 f and g-r noise, the resulting noise increasing with the number of dislocations. In dislocated devices, an α ⋍ 1.8 × 10 −4 has been found which accounts for the base 1/ f noise as mobility-fluctuation noise. A 1/ ff 2 burst noise spectrum was observed when dislocations are clustered.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(84)90138-2