Study of crystallization process of Eu doped SrGa2S4 thin film phosphors by two electron beams evaporation and 355nm Nd:YAG laser-annealing

In this study, the detailed crystallization mechanism of SrGa2S4: Eu2+ thin film phosphors annealed by Nd:YAG laser (355nm) was examined. Using the spectral transmittance measurements of SrS and Ga2S3 thin films, the influence of temperature on SrGa2S4 thin film formation by laser irradiation was in...

Full description

Saved in:
Bibliographic Details
Published inJournal of luminescence Vol. 132; no. 12; pp. 3100 - 3102
Main Authors Kominami, Hiroko, Yamasaki, Takahisa, Nakanishi, Yoichiro, Hara, Kazuhiko
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.2012
Subjects
Cathodoluminescence
Laser annealing
SrGa2S4
Thin film
SrGa2S4
Laser annealing
Cathodoluminescence
Thin film
Online AccessGet full text

Cover

More Information
Summary:In this study, the detailed crystallization mechanism of SrGa2S4: Eu2+ thin film phosphors annealed by Nd:YAG laser (355nm) was examined. Using the spectral transmittance measurements of SrS and Ga2S3 thin films, the influence of temperature on SrGa2S4 thin film formation by laser irradiation was investigated using the thermal conducting equation. From the calculation, it is thought that Ga2S3 absorbed greater laser energy than SrS and generated the heat. By diffusing heat throughout the thin film, crystallization was promoted.
ISSN:0022-2313
1872-7883
DOI:10.1016/j.jlumin.2012.03.021