Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 50; no. 9R; p. 94101
Main Authors Kadotani, Naotoshi, Ohashi, Teruyuki, Takahashi, Tsunaki, Oda, Shunri, Uchida, Ken
Format Journal Article
LanguageEnglish
Japanese
Published 01.09.2011
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.094101