Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching
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Published in | Japanese Journal of Applied Physics Vol. 51; no. 5R; p. 51201 |
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Main Authors | , , , |
Format | Journal Article |
Language | English Japanese |
Published |
01.05.2012
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Online Access | Get full text |
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ISSN: | 0021-4922 1347-4065 |
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DOI: | 10.7567/JJAP.51.051201 |