4H-SiC(0001) Basal Plane Stability during the Growth of Epitaxial Graphene on Inverted-Mesa Structures

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 50; no. 7R; p. 70104
Main Authors Ushio, Shoji, Kutsuma, Yasunori, Yoshii, Arata, Tamai, Naoto, Ohtani, Noboru, Kaneko, Tadaaki
Format Journal Article
LanguageEnglish
Japanese
Published 01.07.2011
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.070104