Oxidation Resistance of Ti–Si–N and Ti–Al–Si–N Films Deposited by Reactive Sputtering Using Alloy Targets

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Published inJapanese Journal of Applied Physics Vol. 50; no. 7R; p. 75802
Main Authors Takahashi, Kousuke, Oka, Nobuto, Yamaguchi, Maho, Seino, Yutaka, Hattori, Koichiro, Nakamura, Shin-ichi, Sato, Yasushi, Shigesato, Yuzo
Format Journal Article
LanguageEnglish
Japanese
Published 01.07.2011
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Author Seino, Yutaka
Yamaguchi, Maho
Hattori, Koichiro
Sato, Yasushi
Takahashi, Kousuke
Nakamura, Shin-ichi
Shigesato, Yuzo
Oka, Nobuto
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Cites_doi 10.1016/S0040-6090(97)00665-2
10.1016/0169-4332(93)90241-3
10.1116/1.581977
10.1116/1.578626
10.1016/S0921-5093(02)00259-9
10.1116/1.577464
10.1016/j.surfcoat.2007.09.017
10.1016/S0257-8972(01)01474-8
10.1063/1.113110
10.1016/S0257-8972(01)01391-3
10.1557/JMR.1986.0601
10.1116/1.577742
10.1016/0169-4332(93)90226-2
10.1116/1.2721577
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Title Oxidation Resistance of Ti–Si–N and Ti–Al–Si–N Films Deposited by Reactive Sputtering Using Alloy Targets
Volume 50
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