Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 50; no. 10S; p. 10
Main Authors Kitayama, Daisuke, Kubota, Toru, Koyanagi, Tomotsune, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Nishiyama, Akira, Sugii, Nobuyuki, Natori, Kenji, Hattori, Takeo, Iwai, Hiroshi
Format Journal Article
LanguageEnglish
Published 01.10.2011
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.50.10PA05