Some aspects of IC radiation hardness evaluation when exposed to neutrons

• Published in: Bezopasnostʹ informat͡s︡ionnykh tekhnologiĭ Vol. 28; no. 2; pp. 34 - 43
• Main Authors: Chumakov, Alexander I., Sogoyan, Armen V., Bobrovsky, Dmitry V., Titovets, Dmitry O., Chumakov, Konstantin A., Diankov, Sergey Y., Khaustov, Vitaly V., Gerasimchuk, Oleg A., Yurkov, Dmitry I.
• Format: Journal Article
• Language: English
• Published: Joint Stock Company "Experimental Scientific and Production Association SPELS 01.04.2021
• Subjects: information security, neutron radiation, main radiation effects, general radiation effects, structural damage, volume ionization, primary recombination, single effects
• ISSN: 2074-7128; 2074-7136
• DOI: 10.26583/bit.2021.2.03

Some features of dominant radiation effects in modern ICs of information, information-computing and control systems when exposed to neutrons are analysed. Occurrence of all main dominant radiation effects in ICs is possible under influence of neutrons. Thus these investigations are essential due to expanding the scope of practical application of VLSI in control systems of nuclear power and physical facilities, affecting the security of information systems. It is shown that the existing models based on the assessment of the equivalence of the average energy release (dose) do not fully adequately describe the effects of neutron radiation exposure. In some cases, there are occurrence of microdosimetric effects and significant deviations due to differences in the processes of primary recombination of excess charge in oxides. These effects should not be ignored. Ionisation energy depends on neutron energy, which leads to differences in the amplitude-time characteristics of the dose rate and the neutron flux density. A significant reduction in switching charges in modern microelectronics leads to the appearance of single event effects when exposed to neutrons, which must also be taken into account when constructing radiation-resistant electronic facilities. The presented results allow us to correctly assess the resistance of semiconductor electronic products to the neutron effects of artificial and natural origin.