Electron mobility and drain current in strained-Si MOSFET

Electron mobility and drain current in a strained-Si MOSFET have been calculated and compared with the mobility and drain current obtained for the relaxed material. In the first step, our mobility model has been calibrated to the “universal mobility” according to the available experimental data for...

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Bibliographic Details
Published inJournal of Telecommunications and Information Technology no. 3; pp. 84 - 87
Main Authors Walczak, Jakub, Majkusiak, Bogdan
Format Journal Article
LanguageEnglish
Published National Institute of Telecommunications 01.06.2023
Subjects
electron mobility
strained-Si MOSFET
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Summary:Electron mobility and drain current in a strained-Si MOSFET have been calculated and compared with the mobility and drain current obtained for the relaxed material. In the first step, our mobility model has been calibrated to the “universal mobility” according to the available experimental data for unstrained Si MOSFETS. Then, employing the mobility parameters derived in the calibration process, electron mobility and the drain current have been calculated for strained-Si MOSFETs.
ISSN:1509-4553
1899-8852
DOI:10.26636/jtit.2007.3.835