Charge-pumping characterization of FILOX vertical MOSFETs

This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold volta...

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Bibliographic Details
Published inJournal of Telecommunications and Information Technology no. 3; pp. 73 - 77
Main Authors Głuszko, Grzegorz, Łukasiak, Lidia, Gili, Enrico, Ashburn, Peter
Format Journal Article
LanguageEnglish
Published National Institute of Telecommunications 01.06.2023
Subjects
charge-pumping
FILOX
interface trap
interface traps
MOSFET
vertical MOSFET
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Summary:This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed.
ISSN:1509-4553
1899-8852
DOI:10.26636/jtit.2007.3.833