MOVPE InP based material for millimetsubmillimeter wave generation and amplificationer and

The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive...

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Bibliographic Details
Published inJournal of Telecommunications and Information Technology no. 1
Main Authors Włodzimierz Strupiński, Kamil Kosiel, Agata Jasik, Rafał Jakieła, Andrzej Jeleński, Eric Kollberg, Larse Dillner, Muhammat Nawaz
Format Journal Article
LanguageEnglish
Published National Institute of Telecommunications 30.03.2002
Subjects
epitaxy InP
microwave generation
MOVPE
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Summary:The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive for modern device applications. The characterisation results of the heterostructures dedicated for HBV varactors and 2-DEG transistors (HEMT) are described.
ISSN:1509-4553
1899-8852
DOI:10.26636/jtit.2002.1.103