Characterization of SOI MOSFETs by means of charge-pumping

This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at fro...

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Bibliographic Details
Published inJournal of Telecommunications and Information Technology no. 3; pp. 67 - 72
Main Authors Głuszko, Grzegorz, Szostak, Sławomir, Gottlob, Heinrich, Lemme, Max, Łukasiak, Lidia
Format Journal Article
LanguageEnglish
Published National Institute of Telecommunications 01.06.2023
Subjects
charge-pumping
electrical characterization
interface traps
SOI MOSFET
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Summary:This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at front-interface
ISSN:1509-4553
1899-8852
DOI:10.26636/jtit.2007.3.832