Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities

The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activa...

Full description

Saved in:
Bibliographic Details
Published inJournal of Telecommunications and Information Technology no. 3; pp. 61 - 66
Main Authors Głuszko, Grzegorz, Łukasiak, Lidia, Kilchytska, Valeriya, Ming Chung, Tsung, Olbrechts, Benoit, Flandre, Denis, Raskin, Jean-Pierre
Format Journal Article
LanguageEnglish
Published National Institute of Telecommunications 01.06.2023
Subjects
charge-pumping
electrical characterization
interface traps
Si layer transfer
SOI
wafer bonding
Online AccessGet full text

Cover

More Information
Summary:The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.
ISSN:1509-4553
1899-8852
DOI:10.26636/jtit.2007.3.831