p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect

• Published in: Materials today : proceedings Vol. 18; pp. 1868 - 1874
• Main Authors: Erdoğan, Erman, Kundakçı, Mutlu, Emre Kasapoğlu, Ahmet, Gür, Emre
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 2019
• Subjects: InGaN thin film; Magnetron sputtering; N2 gas flow; Physical properties; InGaN thin film; Magnetron sputtering; N2 gas flow; Physical properties
• ISSN: 2214-7853; 2214-7853
• DOI: 10.1016/j.matpr.2019.06.675

In this study, effect of N2 gas flow rates on structural, optical and morphological properties of InGaN thin films grown by Radio Frequency Magnetron Sputtering (RFMS) method on p-Si (100) substrate have been investigated. X-ray diffraction (XRD) measurements confirmed that InGaN thin films have been successfully deposited and exhibited diffraction peak belong to (002) plane for each film. The surface roughness of InGaN thin films has been determined by using Atomic Force Microscopy (AFM) and the roughness value is about 13 nm with a maximum height of 36 nm and a maximum depth of 37 nm. The surface roughness value Rq\RMS value is 15 nm, which is almost consistent with the linear roughness value for 0 sccm. The energy band gap of the film was determined by using the optical reflectance spectra and the value of the band gap energy is found to be 2.01, 1.77 eV and 2.26 eV for 0 sccm, 1 sccm and 2 sccm N2 gas flow rates, respectively